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| A Product Line of Diodes Incorporated ZXMS6006SG 60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE INTELLIFET (R) MOSFET ADVANCE INFORMATION Product Summary * * * * Continuos drain source voltage On-state resistance Nominal load current (VIN = 5V) Clamping Energy 60V 100m 2.8A 480mJ Features and Benefits * * * * * * * * * * * * Compact high power dissipation package Low input current Logic Level Input (3.3V and 5V) Short circuit protection with auto restart Over voltage protection (active clamp) Thermal shutdown with auto restart Over-current protection Input Protection (ESD) High continuous current rating Green, RoHS Compliant (Note 1) Halogen and Antimony Free. (Note 2) Qualified to AEC-Q101 Standards for High Reliability Description and Applications The ZXMS6006SG is a self protected low side MOSFET with logic level input. It integrates over-temperature, over-current, over-voltage (active clamp) and ESD protected logic level functionality. The ZXMS6006SG is ideal as a general purpose switch driven from 3.3V or 5V microcontrollers in harsh environments where standard MOSFETs are not rugged enough. * * * * Lamp Driver Motor Driver Relay Driver Solenoid Driver Mechanical Data * * * * * SOT-223 Case: SOT-223 Case Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Matte Tin Finish Weight: 0.112 grams (approximate) D S IN D D IN S Top View Device symbol Top view Pin Out Ordering Information (Note 3) Product ZXMS6006SGTA Notes: Marking ZXMS6006S Reel size (inches) 7 Tape width (mm) 12 Quantity per reel 1,000 1. Contain <900ppm bromine, chlorine (<1500ppm total) and <1000ppm antimony compounds. 2. Diodes Inc's "Green" Policy can be found on our website at http://www.diodes.com 3. For packaging details, go to our website at http://www.diodes.com Marking Information ZXMS 6006S ZXMS6006S = Product type Marking Code IntelliFET(R) is a trademark of Diodes Incorporated, registered in the United States and other jurisdictions worldwide. 1 of 9 December 2010 ZXMS6006SG Document number: DS35141 Rev. 1 - 2 www.diodes.com (c) Diodes Incorporated A Product Line of Diodes Incorporated ZXMS6006SG ADVANCE INFORMATION Functional Block Diagram IntelliFET(R) is a trademark of Diodes Incorporated, registered in the United States and other jurisdictions worldwide. 2 of 9 December 2010 ZXMS6006SG Document number: DS35141 Rev. 1 - 2 www.diodes.com (c) Diodes Incorporated A Product Line of Diodes Incorporated ZXMS6006SG ADVANCE INFORMATION Maximum Ratings @TA = 25C unless otherwise specified Characteristic Continuous Drain-Source Voltage Drain-Source Voltage for short circuit protection Continuous Input Voltage Continuous Input Current @-0.2V VIN 6V Continuous Input Current @VIN < -0.2V or VIN > 6V Pulsed Drain Current @VIN = 3.3V Pulsed Drain Current @VIN = 5V Continuous Source Current (Body Diode) (Note 4) Pulsed Source Current (Body Diode) Unclamped Single Pulse Inductive Energy, TJ = 25C, ID = 0.5A, VDD = 24V Electrostatic Discharge (Human Body Model) Charged Device Model Symbol VDS VDS(SC) VIN IIN IDM IDM IS ISM EAS VESD VCDM Value 60 16 -0.5 ... +6 No limit IIN 2 11 13 2 12 480 4000 1000 Units V V V mA A A A A mJ V V Thermal Characteristics @TA = 25C unless otherwise specified Characteristic Power Dissipation at TA = 25C (Note 4) Linear Derating Factor Power Dissipation at TA = 25C (Note 5) Linear Derating Factor Thermal Resistance, Junction to Ambient (Note 4) Thermal Resistance, Junction to Ambient (Note 5) Thermal Resistance, Junction to Case (Note 6) Operating Temperature Range Storage Temperature Range Notes: Symbol PD PD RJA RJA RJC TJ TSTG Value 1.0 8.0 1.6 12.8 125 83 39 -40 to +150 -55 to +150 Units W mW/C W mW/C C/W C/W C/W C C 4. For a device surface mounted on 15mm x 15mm single sided 1oz weight copper on 1.6mm FR4 board, in still air conditions. Sink split drain 80% and source 20% to isolate connections. 5. For a device surface mounted on 50mm x 50mm single sided 2oz weight copper on 1.6mm FR4 board, in still air conditions. Sink split drain 80% and source 20% to isolate connections. 6. Thermal resistance between junction and the mounting surfaces of drain and source pins. IntelliFET(R) is a trademark of Diodes Incorporated, registered in the United States and other jurisdictions worldwide. 3 of 9 December 2010 ZXMS6006SG Document number: DS35141 Rev. 1 - 2 www.diodes.com (c) Diodes Incorporated A Product Line of Diodes Incorporated ZXMS6006SG ADVANCE INFORMATION Recommended Operating Conditions The ZXMS6006SG is optimized for use with C operating from 3.3V and 5V supplies. Characteristic Input voltage range Ambient temperature range High Level Input Voltage for MOSFET to be on Low Level Input Voltage for MOSFET to be off Peripheral Supply Voltage (voltage to which load is referred) Symbol VIN TA VIH VIL VP Min 0 -40 3 0 0 Max 5.5 125 5.5 0.7 16 Unit V C V V V Thermal Characteristics Max Power Dissipation (W) ID Drain Current (A) Limited 10 by RDS(on) Limited by Over-Current Protection 1ms 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 0 15X15X1.6 mm Single 1oz FR4 50X50X1.6 mm Single 2oz FR4 1 DC 1s 100ms 10ms Limit of s/c protection 100m Single Pulse Tamb=25C 10m 15X15X1.6 mm Single 1oz FR4 1 10 25 50 75 100 125 150 VDS Drain-Source Voltage (V) Temperature (C) Safe Operating Area Thermal Resistance (C/W) 120 100 80 D=0.5 15X15X1.6 mm Single 1oz FR4 T amb=25C Derating Curve Maximum Power (W) 100 15X15X1.6 mm Single 1oz FR4 Single Pulse T amb=25C 60 40 20 0 100 1m 10m 100m 1 Single Pulse D=0.2 D=0.05 D=0.1 10 1 100 1m 10m 100m 1 10 100 1k 10 100 1k Pulse Width (s) Pulse Width (s) Transient Thermal Impedance Pulse Power Dissipation IntelliFET(R) is a trademark of Diodes Incorporated, registered in the United States and other jurisdictions worldwide. 4 of 9 December 2010 ZXMS6006SG Document number: DS35141 Rev. 1 - 2 www.diodes.com (c) Diodes Incorporated A Product Line of Diodes Incorporated ZXMS6006SG ADVANCE INFORMATION Electrical Characteristics @TA = 25C unless otherwise specified Characteristic Static Characteristics Drain-Source Clamp Voltage Off State Drain Current Input Threshold Voltage Input Current Input Current While Over Temperature Active Static Drain-Source On-State Resistance Continuous Drain Current (Note 4) ID Continuous Drain Current (Note 5) Current Limit (Note 7) Dynamic Characteristics Turn On Delay Time Rise Time Turn Off Delay Time Fall Time Over-Temperature Protection Thermal Overload Trip Temperature (Note 8) Thermal Hysteresis (Note 8) Notes: Symbol VDS(AZ) IDSS VIN(th) IIN RDS(on) Min 60 0.7 2.0 2.2 2.6 2.8 4 6 150 - Typ 65 1 60 120 85 75 8 13 8.6 18 34 15 175 10 Max 70 1 2 1.5 100 400 300 125 100 - Unit V A V A A m Test Condition ID = 10mA VDS = 12V, VIN = 0V VDS = 36V, VIN = 0V VDS = VGS, ID = 1mA VIN = +3V VIN = +5V VIN = +5V VIN = +3V, ID = 1A VIN = +5V, ID = 1A VIN = 3V; TA = 25C VIN = 5V; TA = 25C VIN = 3V; TA = 25C VIN = 5V; TA = 25C VIN = +3V VIN = +5V A ID(LIM) td(on) tr td(off) ff TJT ff A s VDD = 12V, ID = 1A, VGS = 5V C C - 7. The drain current is restricted only when the device is in saturation (see graph `typical output characteristic'). This allows the device to be used in the fully on state without interference from the current limit. The device is fully protected at all drain currents, as the low power dissipation generated outside saturation makes current limit unnecessary. 8. Over-temperature protection is designed to prevent device destruction under fault conditions. Fault conditions are considered as "outside" normal operating range, so this part is not designed to withstand over-temperature for extended periods.. IntelliFET(R) is a trademark of Diodes Incorporated, registered in the United States and other jurisdictions worldwide. 5 of 9 December 2010 ZXMS6006SG Document number: DS35141 Rev. 1 - 2 www.diodes.com (c) Diodes Incorporated A Product Line of Diodes Incorporated ZXMS6006SG ADVANCE INFORMATION Typical Characteristics 16 ID Drain Current (A) 14 12 10 8 6 4 2 0 0 1 2 3 4 5 6 7 8 T A = 25C VIN 120 IIN Input Current (A) 5V 4.5V 4V 3.5V 3V 3V 2.5V 2V 100 80 60 40 20 0 0 1 2 3 4 5 9 10 11 12 VDS Drain-Source Voltage (V) VIN Input Voltage (V) Typical Output Characteristic RDS(on) On-Resistance () 0.20 0.15 0.10 0.05 0.00 2.0 T J = 150C ID = 1A Input Current vs Input Voltage 1.4 VTH Threshold Voltage (V) 1.3 1.2 1.1 1.0 0.9 0.8 0.7 -50 -25 0 25 50 75 VIN = VDS ID = 1mA T J = 25C 2.5 3.0 3.5 4.0 4.5 5.0 100 125 150 VIN Input Voltage (V) TJ Junction Temperature (C) On-Resistance vs Input Voltage RDS(on) On-Resistance () 0.20 Threshold Voltage vs Temperature 10 TJ=150C 0.15 VIN = 3V IS Source Curent (A) 1 TJ=25C 0.10 VIN = 5V 0.1 0.05 0.00 -50 -25 0 25 50 75 100 125 150 0.01 0.4 0.6 0.8 1.0 TJ Junction Temperature (C) VSD Source-Drain Voltage (V) On-Resistance vs Temperature Reverse Diode Characteristic IntelliFET(R) is a trademark of Diodes Incorporated, registered in the United States and other jurisdictions worldwide. 6 of 9 December 2010 ZXMS6006SG Document number: DS35141 Rev. 1 - 2 www.diodes.com (c) Diodes Incorporated A Product Line of Diodes Incorporated ZXMS6006SG ADVANCE INFORMATION Typical Characteristics - Continued Drain-Source Voltage (V) 12 10 8 6 4 2 0 -50 0 50 100 150 200 250 300 VIN ID=1A VDS Drain-Source Voltage (V) 12 10 8 6 4 2 0 -50 0 50 100 150 200 250 300 VIN VDS ID=1A Time (s) Time (s) Switching Speed 10 VIN = 5V Switching Speed ID Drain Current (A) 8 6 4 2 0 0 5 VDS = 15V RD = 0 10 Time (ms) Typical Short Circuit Protection IntelliFET(R) is a trademark of Diodes Incorporated, registered in the United States and other jurisdictions worldwide. 7 of 9 December 2010 ZXMS6006SG Document number: DS35141 Rev. 1 - 2 www.diodes.com (c) Diodes Incorporated A Product Line of Diodes Incorporated ZXMS6006SG Package Outline Dimensions ADVANCE INFORMATION DIM A A1 b b2 C D Millimeters Min Max 1.80 0.02 0.10 0.66 0.84 2.90 3.10 0.23 0.33 6.30 6.70 Inches Min Max 0.071 0.0008 0.004 0.026 0.033 0.114 0.122 0.009 0.013 0.248 0.264 DIM e e1 E E1 L - Millimeters Min Max 2.30 BSC 4.60 BSC 6.70 7.30 3.30 3.70 0.90 - Inches Min Max 0.0905 BSC 0.181 BSC 0.264 0.287 0.130 0.146 0.355 - Note: Controlling dimensions are in millimeters. Approximate dimensions are provided in inches. Suggested Pad Layout 3.8 0.15 2.0 0.079 6.3 0.248 2.0 0.079 1.5 0.059 mm inches 2.3 0.091 IntelliFET(R) is a trademark of Diodes Incorporated, registered in the United States and other jurisdictions worldwide. 8 of 9 December 2010 ZXMS6006SG Document number: DS35141 Rev. 1 - 2 www.diodes.com (c) Diodes Incorporated A Product Line of Diodes Incorporated ZXMS6006SG ADVANCE INFORMATION IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDING TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. LIFE SUPPORT Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A. Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. Copyright (c) 2010, Diodes Incorporated www.diodes.com IntelliFET(R) is a trademark of Diodes Incorporated, registered in the United States and other jurisdictions worldwide. 9 of 9 December 2010 ZXMS6006SG Document number: DS35141 Rev. 1 - 2 www.diodes.com (c) Diodes Incorporated |
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